RTF015N03(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RTF015N03 Datasheet PDF : 4 Pages
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2.5V Drive Nch MOSFET
RTF015N03
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
TUMT3
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
zApplications
Switching
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
0.85Max.
0.77
0~0.1
(1) (2)
0.17
0.65 0.65
1.3
Abbreviated symbol : PP
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF015N03
Taping
TL
3000
zInner circuit
(3)
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
12
±1.5
±6.0
0.6
6.0
0.8
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
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1/3
2009.03 - Rev.A
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