RTF015N03(2009) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RTF015N03 Datasheet PDF : 4 Pages
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RTF015N03
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR) DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS (th) 0.5
−
Static drain-source on-state
resistance
RDS (on)∗
−
−
Forward transfer admittance Yfs ∗ 1.5
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ∗ −
Rise time
tr ∗ −
Turn-off delay time
td (off) ∗ −
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
tf ∗ −
Qg ∗ −
Qgs ∗ −
Qgd ∗ −
Typ.
−
−
−
−
170
180
240
−
80
14
12
7
9
15
6
1.6
0.5
0.3
Max.
10
−
1
1.5
240
250
340
−
−
−
−
−
−
−
−
2.2
−
−
Unit
Conditions
µA VGS=12V, VDS=0V
V ID= 1mA, VGS=0V
µA VDS= 30V, VGS=0V
V VDS= 10V, ID= 1mA
mΩ ID= 1.5A, VGS= 4.5V
mΩ ID= 1.5A, VGS= 4V
mΩ ID= 1.5A, VGS= 2.5V
S VDS= 10V, ID= 1.5A
pF VDS= 10V
pF VGS=0V
pF f=1MHz
ns VDD 15V
ns ID= 0.75A
VGS= 4.5V
ns RL=20Ω
ns RG=10Ω
nC VDD 15V VGS= 4.5V
nC ID= 1.5A
nC RL=10Ω RG=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD
−
− 1.2 V
Conditions
IS= 0.6A, VGS=0V
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
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2009.03 - Rev.A
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