HYM72V8035GS-60 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYM72V8035GS-60

8M × 72-Bit EDO- DRAM Module (ECC - Module)

Infineon Technologies 

HYM72V8025/35GS-50/-60

8M x 72-ECC EDO-Module

Absolute Maximum Ratings

Operating temperature range ......................................................................................... 0 to + 70 °C

Storage temperature range...................................................................................... – 55 to + 125 °C

Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 4.6) V

Power supply voltage................................................................................................. – 0.5V to 4.6 V

Power dissipation.................................................................................................................... 5,8 W

Data out current (short circuit) ................................................................................................ 50 mA

Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage to the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V

Parameter

Symbol

Input high voltage

VIH

Input low voltage

VIL

Output high voltage (LVTTL)

VOH

Output „H“level voltage ( IOUT = – 2 mA)

Output low voltage (LVTTL)

VOL

Output „L“level voltage ( IOUT = + 2 mA)

Output high voltage (LVCMOS)

VOH

Output „H“level voltage ( IOUT = – 100 µA)

Output low voltage (LVCMOS)

VOL

Output „L“level voltage ( IOUT = + 100 µA)

Input leakage current

II(L)

(0 V < VIN < Vcc, all other pins = 0 V)

Output leakage current

IO(L)

(DO is disabled, 0 V < VOUT < Vcc)

Average VCC supply current:

ICC1

-50 version

-60 version

Limit Values Unit

min.

max.

2.0

Vcc + 0.3 V

– 0.3

0.8

V

2.4

–

V

Test

Condition

1)

1)

1)

–

0.4

V 1)

Vcc-0.2 –

V 1)

–

0.2

V 1)

– 20

20

µA 1)

– 20

20

µA 1)

–

1260

mA 2) 3) 4)

–

1080

mA

(RAS, CAS, address cycling, tRC = tRC min.)

Standby VCC supply current

ICC2

–

(RAS = CAS =2.4V, one address change

within 15,6 µs trc)

50

mA –

Semiconductor Group

5

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