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Q67100-Q2098 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
Q67100-Q2098
Infineon
Infineon Technologies Infineon
Q67100-Q2098 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
HYM328025S/GS-50/-60
8M × 32-Bit EDO-Module
Absolute Maximum Ratings
Operation temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range......................................................................................... – 55 to 125 °C
Input/output voltage ............................................................................ –0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.72 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C, VCC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current
(RAS, CAS, address cycling, tRC = tRC min)
-50 version
-60 version
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
Limit Values
min.
max.
2.4
Vcc+0.5
– 0.5
0.8
2.4
–
–
0.4
– 20
20
– 10
10
–
960
–
880
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
–
Average VCC supply current
ICC3
during RAS only refresh cycles
(RAS cycling, CAS = VIH, tRC = tRC min)
-50 version
–
-60 version
–
32
mA
960
mA 2) 4)
880
mA
Semiconductor Group
5

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