RS1PB Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

RS1PB

High Current Density Surface Mount Glass Passivated Fast Switching Rectifier

Vishay Semiconductors 

www.vishay.com

RS1PB, RS1PD, RS1PG, RS1PJ

Vishay General Semiconductor

100

100

Pulse Width = 300 μs

1 % Duty Cycle

10

TJ = 150 °C

TJ = 125 °C

1

10

0.1

TJ = 25 °C

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

0.01

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

1

0.1

1

10

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

1000

100

10

TJ = 150 °C

TJ = 125 °C

1000

100

1

10

0.1

TJ = 25 °C

0.01

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics

1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMP (DO-220AA)

Cathode Band

0.012 (0.30) REF.

0.086 (2.18)

0.074 (1.88)

0.053 (1.35)

0.041 (1.05)

0.142 (3.61)

0.126 (3.19)

0.158 (4.00)

0.146 (3.70)

0.013 (0.35)

0.004 (0.10)

0.012 (0.30) 0.018 (0.45)

0.000 (0.00) 0.006 (0.15)

0.045 (1.15)

0.033 (0.85)

0.100

(2.54)

0.103 (2.60)

0.087 (2.20)

0.105

(2.67)

0.036 (0.91)

0.024 (0.61)

0.032 (0.80)

0.016 (0.40)

0.025 0.030

(0.635) (0.762)

0.050

(1.27)

Revision: 13-Aug-2018

3

Document Number: 88934

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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