RS1PJ(2011) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
RS1PJ
(Rev.:2011)
(Rev.:2011)
Vishay Semiconductors
RS1PJ Datasheet PDF : 4 Pages
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New Product
RS1PB thru RS1PJ
Vishay General Semiconductor
100
100
Pulse Width = 300 μs
1 % Duty Cycle
10
TJ = 150 °C
TJ = 125 °C
1
10
0.1
TJ = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
100
10
TJ = 150 °C
TJ = 125 °C
1000
100
1
10
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
Cathode Band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.105
(2.67)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Document Number: 88934 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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