RFP8P05(2002) Ver la hoja de datos (PDF) - Intersil
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RFP8P05 Datasheet PDF : 6 Pages
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Data Sheet
RFD8P05, RFD8P05SM, RFP8P05
January 2002
8A, 50V, 0.300 Ohm, P-Channel Power
MOSFETs
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09832.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD8P05
TO-251AA
D8P05
RFD8P05SM
TO-252AA
D8P05
RFP8P05
TO-220AB
RFP8P05
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.,
RFD8P05SM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 8A, 50V
• rDS(ON) = 0.300Ω
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFD8P05, RFD8P05SM, RFP8P05 Rev. B
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