WS128K32-XG4TX Ver la hoja de datos (PDF) - White Electronic Designs => Micro Semi
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WS128K32-XG4TX Datasheet PDF : 9 Pages
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WS128K32-XXX /
EDI8C32128C
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
Min
Operating Temperature
TA
-55
Storage Temperature
TSTG
-65
Signal Voltage Relative to GND
VG
-0.5
Junction Temperature
TJ
Supply Voltage
VCC
-0.5
Max Unit
+125
°C
+150
°C
Vcc+0.5 V
150
°C
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Symbol
VCC
VIH
VIL
TA
Min
Max
Unit
4.5
5.5
V
2.2
VCC + 0.3
V
-0.3
+0.8
V
-55
+125
°C
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H Out Disable
High Z
Active
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
OE capacitance
COE VIN = 0 V, f = 1.0 MHz
WE1-4 capacitance
HIP (PGA) H1/G
CQFP G4
CQFP G2T/E
CWE VIN = 0 V, f = 1.0 MHz
CS1-4 capacitance
CCS VIN = 0 V, f = 1.0 MHz
Data I/O capacitance
CI/O VI/O = 0 V, f = 1.0 MHz
Address input capacitance CAD VIN = 0 V, f = 1.0 MHz
This parameter is guaranteed by design but not tested.
Max Unit
50 pF
pF
20
50
20
20 pF
20 pF
50 pF
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Sym
Conditions
ILI VCC = 5.5, VIN = GND to VCC
ILO CS = VIH, OE = VIH, VOUT = GND to VCC
ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
VOL IOL = 8mA, VCC = 4.5
VOH IOH = -4.0mA, VCC = 4.5
-15
Min Max
10
10
600
80
0.4
2.4
-17
Min Max
10
10
600
80
0.4
2.4
-20
Min Max
10
10
600
80
0.4
2.4
-25
Min Max
10
10
600
60
0.4
2.4
Units
µA
µA
mA
mA
V
V
Parameter
Input Leakage Current
Sym
Conditions
ILI
VCC = 5.5, VIN = GND to VCC
-35
Min Max
10
-45
Min Max
10
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
10
Operating Supply Current
ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
600
600
Standby Current
ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
60
60
Output Low Voltage
VOL IOL = 2.1mA, VCC = 4.5
0.4
0.4
Output High Voltage
VOH IOH = -1.0mA, VCC = 4.5
2.4
2.4
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS*
(TA = -55°C to +125°C), (TA = -40°C to +85°C)
Characteristic
Data Retention Voltage
Sym
VCC
Conditions
VCC = 2.0V
Data Retention Quiescent Current
ICCDR
CS ≥ VCC -0.2V
Chip Disable to Data Retention Time (1) TCDR
VIN ≥ VCC -0.2V
Operation Recovery Time (1)
TR
or VIN ≤ 0.2V
NOTE: Parameter guaranteed, but not tested.
*Low Power Data Retention available only in G2T/E Package Type.
Min
Typ
2
-
-
1
0
-
TRC
-55
Min Max
10
10
600
60
0.4
2.4
Units
µA
µA
mA
mA
V
V
Max
Units
-
V
4
mA
-
ns
-
ns
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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