SPA-1118 Ver la hoja de datos (PDF) - Stanford Microdevices

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Fabricante

SPA-1118

850 MHz 1 Watt Power Amplifier with Active Bias

Stanford Microdevices 

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SPA-1118 850 MHz 1 Watt Power Amp.

Pin # Function

Description

Device Schematic

1

Vcc VCC is the supply voltage for the active bias network.

Bypassing in the appropriate location as shown on

application schematic is required for optimum RF

performance.

2

Vbias Vbias is the bias control pin for the active bias network.

Device current is set by the current into this pin.

Recommended configuration is shown in the Application

Schematic. Bypassing in the appropriate location as

4,5,7,8 N/C

1

shown on application schematic is required for optimum

RF performance.

3

RF In RF input pin. This pin requires the use of an external

2

ACTIVE BIAS

NETWORK

6

DC blocking capacitor chosen for the frequency of

operation.

4, 5

N/C No connection

6 RF Out/Vcc RF output and bias pin. Bias should be supplied to this

3

pin through an external RF choke. Because DC biasing

is present on this pin, a DC blocking capacitor should

be used in most applications (see application

schematic). The supply side of the bias network should

be well bypassed. An output matching network is

necessary for optimum performance.

7, 8

N/C No connection

EPAD

Gnd Exposed area on the bottom side of the package needs

to be soldered to the ground plane of the board for

optimum thermal and RF performance. Several vias

should be located under the EPAD as shown in the

recommended land pattern (page 6).

Absolute Maximum Ratings

Operation of this device above any one of these

parameters may cause permanent damage.

Bias Conditions should also satisfy the following

expression: IDVD (max) < (TJ - TOP)/Rth,j-l

Caution: ESD sensitive

Appropriate precautions in handling, packaging and

testing devices must be observed.

Parameter

Value

Unit

Supply Current (ID)

Device Voltage (VD)

Power Dissipation

750

mA

6.0

V

4.0

W

Operating Lead Temperature (TL)

RF Input Power

-40 to +85

ºC

250

mW

Storage Temperature Range

-65 to +150 ºC

Operating Junction Temperature (TJ)

+150

ºC

726 Palomar Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

5

http://www.stanfordmicro.com

EDS-101427 Rev B

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