BAS16T Ver la hoja de datos (PDF) - Philips Electronics
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componentes Descripción
Fabricante
BAS16T Datasheet PDF : 12 Pages
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Philips Semiconductors
High-speed diode
Product specification
BAS16T
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MAX.
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
715
855
1
1.25
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
30
1
30
50
1.5
4
1.75
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point TS = 90 °C
VALUE
350
UNIT
K/W
1998 Jan 20
3
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