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BAS16T

High-speed diode

Philips Electronics 

Philips Semiconductors

High-speed diode

Product specification

BAS16T

FEATURES

• Very small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

• Repetitive peak forward current:

max. 500 mA.

APPLICATIONS

• High-speed switching in e.g.

surface mounted circuits.

DESCRIPTION

The BAS16T is a high-speed

switching diode fabricated in planar

technology, and encapsulated in the

very small plastic SMD SOT416

(SC-75) package.

PINNING

PIN

1

2

3

DESCRIPTION

anode

not connected

cathode

handbook, 4 columns

3

3

1

2

n.c.

1

2

Top view

MAM393

Marking code: A6.

Fig.1 Simplified outline (SOT416; SC-75) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VRRM

VR

IF

IFRM

IFSM

Ptot

Tstg

Tj

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

total power dissipation

storage temperature

junction temperature

Ts = 90 °C; see Fig.2

square pulse; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Ts = 90 °C

MIN.

−

−

−

−

MAX.

85

75

155

500

UNIT

V

V

mA

mA

−

4

A

−

1

A

−

0.5

A

−

170

mW

−65

+150 °C

−

150

°C

1998 Jan 20

2

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