DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RN4989(2001) Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
RN4989 Datasheet PDF : 5 Pages
1 2 3 4 5
RN4989
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
IC = 5mA, IB = 0.25mA
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0, f = 1 MHz
Min Typ. Max Unit
100
nA
500
0.167 0.311 mA
70
0.1
0.3
V
2.2
5.8
V
1.5
2.6
V
250
MHz
3
6
pF
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
IC = 5mA, IB = 0.25mA
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0
Min Typ. Max Unit
0.167
70
2.2
1.5
0.1
200
3
100
500
0.311
0.3
5.8
2.6
6
nA
mA
V
V
V
MHz
pF
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Characteristic
Input resistor
Resistor ratio
Symbol
R1
R1/R2
Test
Circuit
Test Condition
Min Typ. Max Unit
32.9 47 61.1 k
1.92 2.14 2.35
3
2001-06-07

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]