DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

IS61SP6464 Ver la hoja de datos (PDF) - Integrated Circuit Solution Inc

Número de pieza
componentes Descripción
Fabricante
IS61SP6464
ICSI
Integrated Circuit Solution Inc ICSI
IS61SP6464 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
IS61SP6464
DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
IOH = –4.0 mA
VOL
Output LOW Voltage
IOL = 8 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage Current
GND < VIN < VCCQ(2)
Com.
Ind.
ILO
Output Leakage Current
GND < VOUT < VCCQ, OE = VIH Com.
Ind.
Min.
Max.
Unit
2.4
V
0.4
V
2.0 VCCQ + 0.3 V
–0.3
0.8
V
–2
2
µA
–10
10
–2
2
µA
–10
10
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
5
pF
COUT
Input/Output Capacitance
VOUT = 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
ZO = 50
Output
Buffer
30 pF
Figure 1
50
1.5V
3.3V
317
OUTPUT
5 pF
Including
jig and
scope
Figure 2
351
Integrated Circuit Solution Inc.
S3-7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]