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RMPA2271

WCDMA/UMTS Power Edge™ Power Amplifier Module with Integrated Power Detector

Fairchild Semiconductor 

PRELIMINARY

May 2005

RMPA2271

WCDMA/UMTS Power Edge™ Power Amplifier

Module with Integrated Power Detector

Features

■ Temperature compensated, integrated power detector with

>20dB dynamic range

■ 41% WCDMA efficiency at +28dBm average output power

1920–1980MHz

■ Meets UMTS/WCDMA and HSDPA performance

requirements

■ Compact Lead-free compliant LCC package–

(3.0 x 3.0 x 1.0 mm nominal)

■ Single positive-supply operation and low power and

shutdown modes

■ Low Vref (2.85V) compatible with advanced handset

chipsets

■ Internally matched to 50Ω and DC blocked RF

input/output

Device

General Description

The RMPA2271 Power Amplifier Module (PAM) is Fairchild’s

latest innovation in 50Ω matched, surface mount modules

targeting WCDMA/UMTS applications. Answering the call for

integrated Power Detection, the RMPA2271 offers the ability to

measure power output over a 20dB range. This feature

eliminates the need of an external power detector and lossy

directional coupler, improving system perfomance and reducing

overall cost. Simple two-state Vmode control is all that is

needed to change the PA optimization from high power to low

power mode to minimize current usage. The 3 x 3 x 1.0mm LCC

package fits into the tightest spaces available on handset

boards and is footprint compatible with existing 3 x 3mm LCC

power amplifiers. The multi-stage GaAs Microwave Monolithic

Integrated Circuit (MMIC) is manufactured using Fairchild’s

InGaP Heterojunction Bipolar Transistor (HBT) process.

Functional Block Diagram

Vcc1 11

RF IN 22

Vmode 33

Vref 44

MMIC

Input

Match

DC Bias Control

Power Detector

88 Vcc2

Output

Match

77

RF OUT

66 GND

55 Pdet

©2005 Fairchild Semiconductor Corporation

1

RMPA2271 Rev. B

www.fairchildsemi.com

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