RMPA2266 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
RMPA2266 Datasheet PDF : 7 Pages
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PRELIMINARY
Absolute Ratings(1)
Symbol
Parameter
Ratings
Vcc1, Vcc2 Supply Voltages
Vref
Reference Voltage
Vmode Power Control Voltage
Pin
RF Input Power
Tstg
Storage Temperature
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Note:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics(2)
Units
V
V
V
dBm
°C
Symbol
Parameter
Comments
Min. Typ. Max. Units
f
Operating Frequency
WCDMA OPERATION
Gp
Power Gain
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
Po
Linear Output Power
Vmode = 0V
Vmode ≥ 2.0V
PAEd PAEd (digital) @ 28dBm
Vmode = 0V
PAEd (digital) @ 16dBm
Vmode ≥ 2.0V
Itot
High Power Total Current
Po = +28dBm, Vmode = 0V
Low Power Total Current
Po = +16dBm, Vmode ≥ 2.0V
Adjacent Channel Leakage Ratio WCDMA Modulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
ACLR1 ±5.00MHz Offset
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
ACLR2 ±10.0MHz Offset
Po = +28dBm, Vmode = 0V
Po = +16dBm, Vmode ≥ 2.0V
GENERAL CHARACTERISTICS
VSWR Input Impedance
Rx No Receive Band Noise Power
Po ≤ +28dBm, 2110 to 2170MHz
2fo
Harmonic Suppression
Po ≤ +28dBm
3fo–5fo
S
Harmonic Suppression
Po ≤ +28dBm
Spurious Outputs(3)(4)
Load VSWR ≤ 5.0:1
Ruggedness with Load Mismatch(4) No permanent damage
Tc
Case Operating Temperature
DC CHARACTERISTICS
Iccq Quiescent Current
Vmode ≥ 2.0V
Iref
Reference Current
Po ≤ +28dBm
Icc(off) Shutdown Leakage Current
No applied RF signal
1920
28
16
-30
28
22
40
20
460
58
-40
-42
-52
-57
2.0:1
-136
-38
-55
25
5
1
1980 MHz
dB
dB
dBm
dBm
%
%
mA
mA
dBc
dBc
dBc
dBc
2.5:1
-60
10:1
85
dBm/Hz
dBc
dBc
dBc
°C
mA
mA
5
µA
Notes:
2. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted.
3. All phase angles.
4. Guaranteed by design.
©2007 Fairchild Semiconductor Corporation
RMPA2266 i-Lo™ Rev. D
2
www.fairchildsemi.com
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