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RM75TPM-H(2002) Ver la hoja de datos (PDF) - Mitsumi

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componentes Descripción
Fabricante
RM75TPM-H Datasheet PDF : 3 Pages
1 2 3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
Ea
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
MITSUBISHI DIODE MODULES
RM75TPM-H,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
Voltage class
Unit
H
2H
800
1600
V
960
1700
V
220
440
V
Symbol
IO
IFSM
I2t
f
Tj
Tstg
Viso
Parameter
DC output current
Surge (non-repetitive) forward current
I2t for fusing
Maximum operating frequency
Junction temperature
Storage temperature
Isolation voltage
Conditions
Three-phase full wave rectifying circuit, TC=85°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Mounting torque
Main terminal screw M5
Mounting screw M5
Weight
Typical value
Ratings
150
1500
9380
1000
–40~+150
–40~+125
2500
1.47~1.96
15~20
1.47~1.96
15~20
200
Unit
A
A
A2s
Hz
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IRRM
VFM
Rth (j-c)
Rth (c-f)
Repetitive reverse current
Forward voltage
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
Tj=150°C, VRRM applied
Tj=25°C, IFM=100A, instantaneous meas.
Junction to case
Case to fin, conductive grease applied
Measured with a 500V megohmmeter between main terminal
and case
Limits
Min. Typ. Max.
15
1.3
0.13
0.06
10
Unit
mA
V
°C/ W
°C/ W
M
Mar.2002

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