DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RLT830-1.5G Ver la hoja de datos (PDF) - Roithner LaserTechnik GmbH

Número de pieza
componentes Descripción
Fabricante
RLT830-1.5G
ROITHNER
Roithner LaserTechnik GmbH ROITHNER
RLT830-1.5G Datasheet PDF : 3 Pages
1 2 3
RLT830-1.5G
TECHNICAL DATA
High Power Infrared Laser Diode
Features
Lasing Mode Structure: multi mode
Peak Wavelength : typ. 830 nm
Optical Ouput Power: 1.5 W
Package: 9 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (TC=25°C)
Item
CW Output Power
Operating Case Temperature
Storage Temperature
Symbol
PO
TC
Tstg
Value
1.5
-20 … +50
-40 … +80
Specifications (TC=25°C)
Item
Symbol
Min.
Typ.
Optical Specification
CW Output Power
Peak Wavelength
Spectral Width (FWHM)
PO
-
1.5
λP
825
830
Δλ
-
2
FWHM Beam Divergence
Emitting Aperature
θ
θ
WxH
-
8
-
30
100 x 1
Lifetime
20000
-
Electrical Specification
Threshold Current
Operating Current
Slope Efficiency
Ith
-
400
Iop
-
1.8
η
1.0
1.2
Operating Voltage
Uop
-
1.9
Monitor Current
Im
-
1.2
The above specifications are for reference purpose only and subjected to change without prior notice.
Max.
-
835
4
10
34
-
600
2.1
-
2.2
1.6
Unit
W
°C
°C
Unit
W
nm
nm
deg
deg
µm
hour
mA
A
W/A
V
mA
23.09.2010
RLT830-1.5G
1 of 3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]