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RJK6013DPP-E0 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
RJK6013DPP-E0
Renesas
Renesas Electronics Renesas
RJK6013DPP-E0 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RJK6013DPP-E0
Main Characteristics
Maximum Safe Operation Area
100
PW
10 μs
10
= 100 μs
1
Operation in this
0.1
area is limited by
RDS(on)
0.01
Ta = 25°C
1 shot
0.001
0.1
1
10
100
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
Tc = 75°C
25°C
4
25°C
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
2.0
VGS = 10 V
Pulse Test
1.6
1.2
ID = 11 A
3A
0.8
5.5 A
0.4
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0612EJ0100 Rev.1.00
Feb 20, 2012
Preliminary
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
7V
16
10 V
6V
5.8 V
12
5.6 V
8
5.4 V
4
5.2 V
VGS = 5 V
0
0
4
8
12 16 20
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
1
10
100
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
100
10
0.1
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6

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