RJK6013DPP Ver la hoja de datos (PDF) - Renesas Electronics
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RJK6013DPP Datasheet PDF : 7 Pages
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RJK6013DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.58 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
ID Note4
ID (pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR (pulse) Note1
IAP Note3
EAR Note3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0253EJ0200
(Previous: REJ03G1582-0100)
Rev.2.00
Feb 04, 2011
D
1. Gate
2. Drain
3. Source
S
Ratings
600
30
11
33
11
33
4
0.87
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0253EJ0200 Rev.2.00
Feb 04, 2011
Page 1 of 6
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