RJK0230DPA-00-J5A Ver la hoja de datos (PDF) - Renesas Electronics

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RJK0230DPA-00-J5A

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Renesas Electronics 

Preliminary Datasheet

RJK0230DPA

Silicon N Channel Power MOS FET with Schottky Barrier Diode

High Speed Power Switching

R07DS0541EJ0110

Rev.1.10

Sep 12, 2011

Features

 Low on-resistance

 Capable of 4.5 V gate drive

 High density mounting

 Pb-free

 Halogen-free

Outline

RENESAS Package code: PWSN0008DD-B

(Package name: WPAK-D(3))

234

D1 D1 D1

5 678

1

8

G1

G2

4 32 1

MOS1

9

S1/D2

5678

9

S2 S2 S2

56 7

4321

(Bottom View)

MOS2 and

Schottky Barrier Diode

1, 8

Gate

2, 3, 4, 9 Drain

5, 6, 7, 9 Source

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

ID(pulse)Note1

IDR

IAP Note 2

EAR Note 2

Pch Note3

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc=25C

MOS1

25

±20

20

80

20

12

18

15

150

–55 to +150

Ratings

MOS2

25

±12

50

200

50

23

66

35

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

R07DS0541EJ0110 Rev.1.10

Sep 12, 2011

Page 1 of 10

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