RFUS20NS6S Ver la hoja de datos (PDF) - ROHM Semiconductor

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RFUS20NS6S

Super Fast Recovery Diode

ROHM Semiconductor 

Super Fast Recovery Diode

RFUS20NS6S

Data Sheet

lSerise

Ultra Fast Recovery

lDimensions (Unit : mm)

lLand size figure (Unit : mm)

lApplication

General rectification

lFeatures

for LPDS

1) Ultra low switching loss

2) High current overload capacity

d 3) Cathode common single type

ROHM : LPDS

JEITA : TO263S

1 Manufacture Year, Week and

de lConstruction

n s Silicon epitaxial planar type

lTaping Dimensions (Unit : mm)

lStructure

2

1

3

ommDeesign lAbsolute maximum ratings (Tc= 25°C)

c Parameter

Symbol

Repetitive peak reverse voltage

VRM

e w Reverse voltage

VR

R e Average rectified forward current

Io

t Forward current surge peak

IFSM

N Junction temperature

Tj

No Storage temperature

Tstg

Conditions

Limits Unit

Duty≦0.5

600

V

Direct voltage

600

V

60Hz half sin wave resistive load Tc=36°C

20

A

60Hz half sin wave, Non-repetitive

one cycle peak value, Tj=25°C

100

A

-

150

°C

-

-55 to +150 °C

lElectrical characteristics (Tj = 25°C)

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Forward voltage

VF

IF=20A

- 2.4 2.8 V

Reverse current

IR

VR=600V

- 0.05 10 mA

Reverse recovery time

trr IF=0.5A, IR=1A, Irr=0.25×IR - 23 35 ns

Thermal resistance

Rth(j-c)

junction to case

-

-

2 °C/W

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1/5

2014.10 - Rev.B

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