RFG60P05E Ver la hoja de datos (PDF) - Fairchild Semiconductor
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RFG60P05E Datasheet PDF : 8 Pages
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RFG60P05E
PSPICE Electrical Model
.SUBCKT RFG60P05E 2 1 3;
REV 9/20/94
CA 12 8 1.01e-8
CB 15 14 1.05e-8
CIN 6 8 6.9e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -76.35
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 7.9e-9
LSOURCE 3 7 4.18e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 12.83e-3
RGATE 9 20 1.5
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 3.25e-3
RVTO 18 19 RVTOMOD 1
10
DPLCAP
GATE
RGATE
EVTO
-
18
1 LGATE 9
20 8
ESG
8
- 6+
5
RDRAIN
16
VTO
-
6
21
MOS1
+
EBREAK 17
18
-
MOS2
11
DRAIN
2
LDRAIN
DBODY
RIN
CIN
DBREAK
S1A
12 13
8
S2A
14
15
13
8
RSOURCE
LSOURCE
3
7
SOURCE
RBREAK
17
18
S1B
S2B
13
RVTO
CA
CB
+
EGS
-
6
8
+ 14
EDS
-
5
8
IT
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.83
.MODEL DBDMOD D (IS = 1.24e-12 RS = 4.72e-3 TRS1 = 1.43e-3 TRS2 = -4.91e-7 CJO = 6.98e-9 TT = 1.5e-7)
.MODEL DBKMOD D (RS = 1.11e-1 TRS1 = 1.34e-3 TRS2 = 4.46e-12)
.MODEL DPLCAPMOD D (CJO = 15e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -3.71 KP = 31.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.42e-4 TC2 = 0)
.MODEL RDSMOD RES (TC1 = 5.85e-3 TC2 = 7.69e-6)
.MODEL RVTOMOD RES (TC1 = -3.39e-3 TC2 = 1.07e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.6 VOFF = 2.6)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.6 VOFF = 4.6)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.16 VOFF = -3.84)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.84 VOFF = 1.16)
.ENDS
For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature
Options; written by William J. Hepp and C. Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
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