RFG60P05E Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
RFG60P05E Datasheet PDF : 8 Pages
| |||
RFG60P05E
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
MIL-STD-883, Category B(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RFG60P05E
-50
-50
±20
60
Refer to Peak Current Curve
215
1.43
Refer to UIS Curve
2
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
W/oC
kV
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t (ON)
t d(ON)
tr
t d(OFF)
tF
t (OFF)
Q g(TOT)
Q g(-10)
Q g(TH)
C ISS
C OSS
C RSS
RθJC
R θ JA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -50V, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 60A, VGS = -10V (Figure 9)
VDD = -25V, ID = 30A, RL = 0.83Ω,
VGS = -10V, RGS = 2.5Ω
(Figure 13)
VGS = 0V to -20V
VGS = 0V to -10V
VGS = 0V to -2V
VDD = -40V, ID = 60A,
RL = 0.67Ω
Ig(REF) = -4mA
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
-50
-
-
V
-2
-
-4
V
-
-
-1
µA
-
-
-25
µA
-
- ±100 nA
-
- 0.030 Ω
-
-
125
ns
-
20
-
ns
-
60
-
ns
-
65
-
ns
-
20
-
ns
-
-
125
ns
-
-
450 nC
-
-
225 nC
-
-
15
nC
- 7200 -
pF
- 1700 -
pF
-
325
-
pF
-
-
0.70 oC/W
-
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
NOTE:
V SD
t RR
ISD = -60A
ISD = -60A, dISD/dt = 100A/µs
-
-
-1.75
-
-
200
2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B
Share Link: 