RFD4N06L Ver la hoja de datos (PDF) - Fairchild Semiconductor
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RFD4N06L Datasheet PDF : 5 Pages
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RFD4N06L, RFD4N06LSM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Maximum Power Dissipation
Derated above 25oC. . . . .
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFD4N06L
RFD4N06LSM
60
60
±1 0
4
10
30
0.20
-55 to 175
300
260
UNITS
V
V
V
A
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
BVDSS ID = 1mA, VGS = 0V
V GS(TH)
I DSS
VGS = VDS, ID = 250µA
TC = 25oC, VDS = 50V, VGS = 0V
TC = 125oC, VDS = 50V, VGS = 0V
IGSS VGS = ±10V, VDS = 0V
VDS(ON) ID = 1A, VGS = 5V
ID = 2A, VGS = 5V
ID = 4A, VGS = 7.5V
rDS(ON) ID = 1A, VGS = 5V
V(plateau) VDS = 15V, ID = 4A
t d(ON)
tr
VDD = 30V, ID = 1A, RGS = 6.25Ω,
VGS = 5V
t d(OFF)
tf
Qg(TOT) VGS = 0-10V
Qg(5) VGS = 0-5V
VDD = 48V,
ID = 2A,
RL = 24Ω
Qg(TH) VGS = 0-1V
RθJC
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD ISD = 1A
Reverse Recovery Time
t rr
ISD = 2A, dISD/dt = 100A/µs
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
60
-
-
V
1
-
2.5
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.8
V
-
-
2.0
V
-
-
4.0
V
-
-
0.600
Ω
-
-
4.5
V
-
-
20
ns
-
-
130
ns
-
-
40
ns
-
-
160
ns
-
-
8
nC
-
-
5
nC
-
-
1
nC
-
-
5
oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
©2002 Fairchild Semiconductor Corporation
RFD4N06L, RFD4N06LSM Rev. B
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