RF505B6S Ver la hoja de datos (PDF) - ROHM Semiconductor
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RF505B6S Datasheet PDF : 4 Pages
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Super Fast Recovery Diode
RF505B6S
Series
Standard Fast Recovery
Dimensions（Unit : mm）
Applications
General rectification
Features
1)Power mold type. (CPD)
2)High switching speed
3)Low Reverse current
Construction
Silicon epitaxial planar
Production month
Taping dimensions（Unit : mm）
Data Sheet
Land size figure (Unit : mm)
6.0
(2)
1.6
1.6
(1)
(3)
CPD
2.3 2.3
Structure
(2)
(1)
(3)
Absolute maximum ratings（Tc=25C）
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak Reverse voltage
VRM
Duty0.5
600
V
Reverse voltage
VR
Direct voltage
600
V
Average rectified forward current
Io
60Hz half sin wave,resistive load Tc=42C
5
A
Forward current surge peak
IFSM
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25 C
50
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to 150
C
Electrical characteristics（Tj=25C）
Parameter
Symbol
Forward voltage
VF
Reverse current
Reverse recovery time
Thermal resistance
IR
trr
Rth(j-l)
Conditions
IF=5.0A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Min. Typ.
-
1.3
-
0.05
-
22
-
－
Max.
1.7
10
30
12
Unit
V
μA
ns
C/W
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1/3
2011.05 - Rev.A
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