RF3800 Ver la hoja de datos (PDF) - RF Micro Devices
Número de pieza
componentes Descripción
Fabricante
RF3800 Datasheet PDF : 12 Pages
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RF3800
Evaluation Board Schematic - 450MHz
3
C14 + C13
0.1 μF 10 μF
C12
C11
R1
1000 pF 220 pF 910 Ω
R2
910 Ω
C24
0.1 μF
C25
220 pF
VREF
R3
R4
R5
910 Ω
DNI
DNI
C18
220 pF
VCC
C17
1000 pF
C16 + C23
10 μF
0.1 μF
C22
C21
220 pF 1000 pF
C20 + C19
10 μF
0.1 μF
J1
RF IN
50 Ω μstrip
L1
4.7 nH
C3
220 pF
L3
C1
C2
L2
5.6 nH
DNI
15 pF 2.7 nH
1
Bias
Circuit
2
3
4
8
7
L4
47 nH
L5
1.8 nH
50 Ω μstrip
J2
6
C4
C5
C6
C7
C8
C9
C10
RF OUT
DNI
12 pF
DNI
DNI
DNI
12 pF 220 pF
5
PACKAGE BASE
GND
3800406 r1
P1
P1-1 1 VREF
BANANA JACK
P2
P2-1 1 VCC
BANANA JACK
P3
1 GND
BANANA JACK
RF3800 Biasing Table
The resistor values shown below are for varied VCC/ICQ conditions. Biasing for higher quiescent current will give increased lin-
earity. “R_Bias”=equivalent R in line with VREF (see values on evaluation board schematic: R1, R2, R3).
VCC (V)
8
8
8
8
5
5
5
5
VREF (V)
8
8
8
8
5
5
5
5
R_Bias (Ω)
300
170
105
72
110
48
21
4.9
IREF (mA)
16
25
35
45
16
25
35
45
ICQ (mA)
400
563
632
684
372
493
574
629
3-112
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A9 DS070130
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