RF3166 Ver la hoja de datos (PDF) - RF Micro Devices
Número de pieza
componentes Descripción
Fabricante
RF3166 Datasheet PDF : 16 Pages
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DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
50 Ω μstrip
VRAMP
GSM IN
50 Ω μstrip
RF3166
Application Schematic
50 Ω μstrip
1
9
DCS/PCS OUT
2
3
4
5
6
50 Ω μstrip
7
8
GSM OUT
DCS/PCS IN
BAND SELECT
TX ENABLE
VBATT
VRAMP
GSM IN
50 Ω μstrip
22 μF*
50 Ω μstrip
Evaluation Board Schematic
P1
1 GND P2-1
CON1
P2
1 VCC
CON1
50 Ω μstrip
1
9
DCS/PCS OUT
2
3
4
5
6
50 Ω μstrip
7
8
GSM OUT
Notes:
* The value of the VBATT decoupling capacitor depends on the noise level of the phone board.
Capacitor type may be either tantalum or ceramic. Some applications may not require this capacitor.
1. All the PA output measurements are referenced to the PA output pad (pins 8 and 9).
2. The 50 Ω μstrip between the PA output pad and the SMA connector has an approximate insertion loss
of 0.1 dB for GSM850/EGSM900 and 0.2 dB for DCS1800/PCS1900 bands.
Rev A3 DS061031
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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