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RF2495 Ver la hoja de datos (PDF) - RF Micro Devices

Número de pieza
componentes Descripción
Fabricante
RF2495
RFMD
RF Micro Devices RFMD
RF2495 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RF2495
Pin Function Description
Interface Schematic
1
VCC1
Supply voltage for the LNA, bias circuits, and control logic. External RF
bypassing is required. The trace length between the pin and the bypass
capacitors should be minimized. The ground side of the bypass capaci-
tors should connect immediately to ground plane.
2
LNA_IN RF Input pin. This pin is internally matched for optimum noise figure
from a 50source. This pin is internally DC-biased and, if connected
to a device with DC present, should be blocked with a capacitor suit-
able for the frequency of operation.
VBIAS
LNA IN
GND1
3
GND2
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
4
GND1
Ground connection for the LNA circuits. For best performance, keep See pin 2.
traces physically short and connect immediately to ground plane.
5
ATTN
Attenuation pin. A logic high reduces LNA gain by 15dB.
VCC
ATTN
6
LNA OUT LNA Output pin. This pin requires a connection to VCC through an
inductor.
GND2
LNA OUT
7
SOURCE Connection to source of MOSFET transistor used as mixer. Drain and
source are symmetric.
DRAIN
SOURCE
GATE
8
DRAIN
Connection to drain of MOSFET transistor used as mixer.
See pin 7.
9
GATE
Connection to gate of MOSFET transistor used as mixer. Internally
See pin 7.
DC-biased. Use DC-blocking capacitor.
10
PD
Power control. A logic “low” turns the part off. A logic “high” (>1.6V)
turns the part on.
VCC
PD
ESD
This diode structure is used to provide electrostatic discharge protec-
tion to 3kV using the Human body model. The following pins are pro-
tected: 1, 3, 5, 9, 10.
GND2
VCC
Rev A4 030220
8-283

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