RF2115 Ver la hoja de datos (PDF) - RF Micro Devices
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RF2115 Datasheet PDF : 8 Pages
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RF2115L
2
HIGH POWER UHF AMPLIFIER
Typical Applications
• Analog Communication Systems
• 400MHz Industrial Radios
• Analog Cellular Systems (AMPS & TACS) • Driver Stage for Higher Power Applications
• 900MHz Spread-Spectrum Systems
• Portable Battery-Powered Equipment
2
Product Description
The RF2115L is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters or ISM applications operating at
915MHz. The device is packaged in a 16-lead ceramic
quad leadless chip carrier with a backside ground. The
device is self-contained with the exception of the output
matching network and power supply feed line. A two-bit
digital control provides 4 levels of power control, in 10dB
steps.
.258
.075
.242
.065
1
.150
.050
.258
.242
R.008
.033
.017
.050
.022
.018
.025
.098
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
1 16 15 14
VCC3 2
VCC1 3
BIAS
CIRCUIT
13 RF OUT
12 GND
GND 4
11 RF OUT
PD 5
GAIN CONTROL
10 RF OUT
6789
Functional Block Diagram
.098
Package Style: QLCC-16
Features
• Single 5V to 6.5V Supply
• Up to 1.0W CW Output Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Output Power
• Small Package Outline (0.25" x 0.25")
Ordering Information
RF2115L
High Power UHF Amplifier
RF2115L PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B1 010329
2-39
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