RF051VA2S Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RF051VA2S Datasheet PDF : 4 Pages
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Diodes
zElectrical characteristic curves
RF051VA2S
1000
100
Ta=125℃
Ta=150℃
10 Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
0.01
0.001
0
200 400 600 800 1000
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1000000
100000
10000
1000
100
10
1
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
50
100
150
200
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
10
1
0.1
0
f=1MHz
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
890
1000
Ta=25℃
IF=0.5A
900
880
n=30pcs
800
700
870
600
500
860
400
300
AVE:861.0mV
850
200
100
840
0
10
Ta=25℃
9
VR=200V
8
n=30pcs
7
6
5
4
AVE:516.3nA
3
2
1
0
VF DISPERSION MAP
IR DISPERSION MAP
fT=a1=M2H5℃z
VfR=1=M0VHz
VR=0V
n=10pcs
ave=3.68pF
AVE:3.13pF
Ct DISPERSION MAP
50
45
40
35
30
25
20
15
10
5
0
100
10
1
0.1
1
Ifsm
1cyc
8.3ms
AVE:6.50A
IFSM DISRESION MAP
Ifsm
t
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
30
100
Ta=25℃
25
IF=0.5A
Ifsm
IR=1A
8.3ms 8.3ms
20
Irr=0.25*IR
10
n=10pcs
1cyc
15
10
1
5
AVE8.6ns
0
trr DISPERSION MAP
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
Mounted on epoxy board
IM=1mA
IF=10mA
1ms tim
300us
100
Rth(j-a)
Rth(j-c)
1
DC
0.8
D=1/2
0.6
Sin(θ＝180)
0.4
0.2
10
0
0.01 0.1
1
10 100 1000
0
TIME:t(s)
Rth-t CHARACTERISTICS
0.5
1
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3
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