IXTH14N80 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH14N80 Datasheet PDF : 4 Pages
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IXTH 14N80
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
8 14
S
4500
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
310
pF
65
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
RG = 2 Ω, (External)
20 50 ns
33 50 ns
63 100 ns
32 50 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
145 170 nC
30 45 nC
55 80 nC
0.42 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
14 A
56 A
1.5 V
800
ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A
2.2 2.54
1
A
2.2 2.6
2
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅ P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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