IXTH14N80 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH14N80 Datasheet PDF : 4 Pages
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MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 14N80
VDSS = 800 V
ID25 = 14 A
RDS(on) = 0.70 Ω
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
PD
TJ
TJM
Tstg
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
Max. lead temperature for soldering 300
1.6 mm (0.063 in) from case for 10 s
Md
Weight
Mounting torque
Maximum Ratings
800
V
800
V
±20
V
±30
V
14
A
56
A
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
°C
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
1.13/10 Nm/lb.in.
6
g
Features
l International standard package
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Low package inductance (< 5 nH)
- easy to drive and to protect
l Fast switching times
Symbol
VDSS
V
GS(th)
I
GSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
800
V
DS
=
V,
GS
I
D
=
250
µA
2
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
V = 10 V, I = 0.5 I
GS
D
D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
250 µA
1 mA
0.7 Ω
Applications
l Switch-mode and resonant-mode
power supplies
l Motor control
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96518F(12/97)
1-4
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