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IXFN27N80Q Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
IXFN27N80Q
IXYS
IXYS CORPORATION IXYS
IXFN27N80Q Datasheet PDF : 2 Pages
1 2
IXFN 27N80Q
Symbol
g
fs
Ciss
C
oss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Q
gs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
20 27
S
7600
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
750
pF
120
pF
20
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
28
ns
RG = 1 (External),
50
ns
13
ns
170
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
47
nC
65
nC
0.24 K/W
0.05
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
V
SD
IF = IS, VGS = 0 V,
Note 1
t
rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
QRM
I
RM
27 A
108 A
1.5 V
250 ns
1.3
µC
8
A
Note 1: Pulse test, t 300 µs, duty cycle d 2 %
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min.
Max.
31.50
7.80
31.88
8.20
4.09
4.29
4.09
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.42
4.72
4.85
24.59
-0.05
25.07
0.1
Inches
Min.
Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

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