IXFN27N80Q Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN27N80Q Datasheet PDF : 2 Pages
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HiPerFETTM
Power MOSFETs
Q-Class
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
Symbol
Test Conditions
V
DSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
IXFN 27N80Q
VDSS
ID25
RDS(on)
= 800 V
= 27 A
= 320 mΩ
D
G
S
S
Maximum Ratings
800
V
800
V
±20
V
±30
V
27
A
108
A
27
A
60
mJ
2.5
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• Internationalstandardpackage
• Epoxy meet
UL94V-0, flammability classification
• miniBLOCwith Aluminium nitride
isolation
• IXYS advanced low Qg process
• Ruggedpolysilicongatecellstructure
• Unclamped Inductive Switching (UIS)
rated
• Lowpackageinductance
• FastintrinsicRectifier
Symbol
Test Conditions
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
800
2.5
TJ = 25°C
TJ = 125°C
V
4.5 V
±100 nA
100 µA
2 mA
0.32 Ω
Applications
• DC-DC converters
• Batterychargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
Advantages
• Easy to mount
• Space savings
• High power density
© 2001 IXYS All rights reserved
98813 (04/01)
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