ESM4120 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

ESM4120

Fast Recovery Diode

Dynex Semiconductor 

1000

100

10

IF

∫ 50µs

QS = 0

QS

Conditions:

Tj = 125 ˚C,

VR = 100V

tp = 1ms

dIR/dt

IRR

IF = 1000A

IF = 500A

IF = 200A

IF = 100A

ESM4120

1

1

1000

10

100

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.3 Recovered charge

1000

Conditions:

Tj = 125˚C,

VR = 100V

100

IF = 1000A

10

1

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.4 Typical reverse recovery current vs rate of rise of forward current

5/8

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