ESM412008 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

ESM412008

Fast Recovery Diode

Dynex Semiconductor 

ESM4120

CURVES

4/8

1000

Measured under pulse conditions

900

800

700

Tj = 125˚C

Tj = 25˚C

600

500

1.25

1.5

1.75

2.0

2.25

Instantaneous forward voltage VF - (V)

Fig.1 Maximum (limit) forward characteristics

500

Measured under pulse conditions

400

300

Tj = 125˚C

200

100

Tj = 25˚C

0

1.0

1.2

1.4

1.6

1.8

Instantaneous forward voltage VF - (V)

Fig.2 Maximum (limit) forward characteristics

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