ESM412010 Ver la hoja de datos (PDF) - Dynex Semiconductor

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ESM412010

Fast Recovery Diode

Dynex Semiconductor 

CHARACTERISTICS

Symbol

Parameter

V

Forward voltage

FM

IRRM

Peak reverse current

trr

Reverse recovery time

QRA1

Recovered charge (50% chord)

IRM

Reverse recovery current

K

Soft factor

VTO

r

T

VFRM

Threshold voltage

Slope resistance

Forward recovery voltage

Conditions

At 450A peak, T = 25oC

case

At V , T = 125oC

RRM case

I

F

=

200A,

di /dt

RR

=

50A/µs

T = 125oC, V = 100V

case

R

At T = 125oC

vj

At T = 125oC

vj

di/dt = 1000A/µs, Tj = 125oC

DEFINITION OF K FACTOR AND QRA1

dIR/dt

t1

0.5x IRR

IRR

QRA1 = 0.5x IRR(t1 + t2)

t2 k = t1/t2

τ

ESM4120

Typ. Max. Units

-

1.7

V

-

100 mA

0.8

-

µs

-

15

µC

-

34

A

-

-

-

-

1.25 V

-

1.0 mΩ

-

25

V

3/8

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