MDD44-08N1B(2016) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MDD44-08N1B Datasheet PDF : 6 Pages
| |||
MDD44-08N1B
Rectifier
1500
50 Hz, 80% VRRM
1000
IFSM
[A]
500
TVJ = 45°C
TVJ = 125°C
104
VR = 0 V
TVJ = 45°C
I2t
[A2s]
TVJ = 125°C
120
100
80
IFAVM
60
[A]
40
DC
180° sin
120°
60°
30°
0
10-3
10-2
10-1
100
101
t [s]
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
103
1
2
3
t [ms]
6 8 10
Fig. 2 I2t versus time (1-10 ms)
120
100
80
PT
60
[W]
40
20
DC
180° sin
120°
60°
30°
RthJA
[K/W]
1
1.5
2
2.5
3
4
5
6
20
0
0
50
100
150
200
TC [°C]
Fig. 3 Maximum forward current
at case temperature
0
0
20
40
60
80
0
ITAVM, IFAVM [A]
50
100
150
TA [°C]
Fig. 4 Power dissipation vs. onstate current and ambient temperature (per diode)
400
300
Ptot
200
[W]
100
RL
Circuit
B2
2x MDD44
RthKA
[K/W]
0.2
0.25
0.3
0.4
0.5
0.6
1.0
1.3
0
0
50
100
0
50
100
150
IdAVM [A]
TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature; R = resistive load,L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
Share Link: 