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R7518(2005) Ver la hoja de datos (PDF) - Hamamatsu Photonics

Número de pieza
componentes Descripción
Fabricante
R7518
(Rev.:2005)
Hamamatsu
Hamamatsu Photonics Hamamatsu
R7518 Datasheet PDF : 4 Pages
1 2 3 4
PHOTOMULTIPLIER TUBES
R7518
R7518P (For Photon Counting)
High Sensitivity with Low Noise Photocathode
FEATURES
GSpectral Response .................................. 185 nm to 730 nm
GHigh Cathode Sensitivity
Luminous ......................................................... 130 µA/lm
Radiant at 410 nm ............................................. 85 mA/W
GHigh Anode Sensitivity (at 1000 V)
Luminous ......................................................... 1560 A/lm
Radiant at 410 nm ..................................... 10.2 × 105 A/W
GLow Dark Current ....................................................... 0.2 nA
GLow Dark Counts (R7518P) ......................................... 10 s-1
APPLICATIONS
GChemiluminescence Detection
GBioluminescence Detection
GFluorescence Spectrometer
GSO2 Monitor (UV Fluorescence)
SPECIFICATIONS
GENERAL
Parameter
Description/Value
Unit
Spectral Response
185 to 730
nm
Wavelength of Maximum Response
410
nm
Photocathode
MateriaI
Minimum Effective Area
Low noise bialkali
8 × 24
mm
Window Material
UV glass
Secondary Emitting Surface
Low noise bialkali
Dynode
Structure
Circular-cage
Number of Stages
9
Direct Interelectrode
Anode to Last Dynode
4
pF
Capacitances
Anode to All Other Electrode
6
pF
Base
11-pin base JEDEC No. B11-88
Weight
Operating Ambient Temperature
45
g
-30 to +50
°C
Storage Temperature
SuitabIe Socket
-30 to +50
°C
E678–11A (Sold Separately)
SuitabIe Socket Assembly
E717–63 (Sold Separately)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.

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