R2A20118ASP Ver la hoja de datos (PDF) - Renesas Electronics
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R2A20118ASP Datasheet PDF : 10 Pages
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R2A20118ASP
Preliminary
Electrical Characteristics
(Ta = 25°C, VCC = 12 V, RT = 33 k, BO = 5 V, OCP = TL = OVP2 = GND, CRAMP = 820 pF, FB = COMP,
RAMP-GAIN = OPEN)
Item
Symbol
Min
Typ Max
Unit
Test Conditions
Supply
UVLO turn-on threshold
Vuvlh
9.8 10.5 11.2
V
UVLO turn-off threshold
Vuvll
8.8
9.3
9.8
V
UVLO hysteresis
Hysuvl
0.7
1.2
1.7
V
Standby current
Istby
—
85
170
A VCC = 8.9 V
Operating current
Icc
—
4.2
6.3
mA FB: Open
Brownout BO threshold voltage
Vbo
1.33 1.40 1.47
V
BO pin hysteresis current
Ibo
6.7
7.5
8.3
A BO = 1 V
VREF
Output voltage
Vref
4.925 5.00 5.075
V
Isource = –1 mA
Line regulation
Vref-line
—
5
20
mV Isource = –1 mA
Vcc = 10 V to 24 V
Load regulation
Temperature stability
Vref-load
dVref
—
5
20
mV Isource = –1 mA to –5 mA
—
80
—
ppm/°C Ta = –40 to 125°C *1
Error
amplifier
Feedback voltage
Input bias current
Open loop gain
Vfb
2.452 2.49 2.528
V
FB-COMP short
Ifb
–0.5 –0.3 –0.1
A Measured pin: FB
FB = 3 V *1
Av
—
60
—
dB
*1
Upper clamp voltage
Vclamp-comp
4.0
4.3
—
V
FB = 2.0 V
COMP: Open
Low voltage
Vl-comp
—
0.1
0.3
V
FB = 3.0 V
COMP: Open
Source current
Isrc-comp
—
–120
—
A FB = 1.5 V
COMP = 2.5 V
Sink current
Isnk-comp
—
330
—
A FB = 3.5 V
COMP = 2.5 V
Transconductance
gm
120
200
290
s
FB = 2.45V 2.55 V
COMP = 2.5 V
RAMP
RAMP charge current 1
Ic-ramp1
72
80
88
A RAMP = 0 V to 3 V
RAMP-GAIN = GND
RAMP charge current 2
Ic-ramp2
288
320
352
A RAMP = 0 V to 3 V
RAMP discharge current
Id-ramp
7
15
29
mA FB = 3 V
RAMP = 1 V
Low voltage
Vl-ramp
—
17
200
mV FB = 3 V
Isink = 100 A
RAMP
gain
control
Threshold voltage
Vth-ramp_gain 1.5
2.5
3.5
Input bias current
Iramp_gain
–14
–10
–6
AC detect low threshold voltage Vac-lo
2.9
3.2
3.5
V
Measured pin RAMP-GAIN
A RAMP-GAIN = 3.5 V
V
Measured pin BO
AC detect hysteresis
Hys-ac
350
390
430
mV Measured pin BO
Note: *1 Design spec.
R03DS0002EJ0100 Rev.1.00
Jul 14, 2010
Page 5 of 9
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