R2A20112SP Ver la hoja de datos (PDF) - Renesas Electronics
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R2A20112SP Datasheet PDF : 8 Pages
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R2A20112SP/DD
Electrical Characteristics (cont.)
(Ta = 25°C, Vcc = 12 V, RT = 22 kΩ, OCP = GND, CRAMP = 680 pF, RZCD-GND = 51 kΩ, FB = COMP)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Error
Feedback voltage
Vfb
amplifier Input bias current
Ifb
2.40
2.50
2.60
–0.5
0
0.5
V
FB-COMP short, RAMP = 0 V
μA Measured pin: FB
Open loop gain
Av
—
60
—
dB *1
Upper clamp voltage
Vclamp-comp
8.0
9.1
10.6
V
FB = 2.0 V, COMP: Open
Low voltage
Vl-comp
—
0.1
0.3
V
FB = 3.0 V, COMP: Open
Source current
Isrc-comp
—
–120
—
μA FB = 1.5 V, COMP = 2.5 V
Sink current 1
Isnkcomp1
—
120
—
μA *1
Sink current 2
Transconductance
Isnkcomp2
gm
—
300
—
150
200
290
μA FB = 3.5 V, COMP = 2.5 V
μs
FB = 2.45 V ↔ 2.55 V,
COMP = 2.5 V
RAMP
RAMP charge current
Ic-ramp
130
150
170
μA RAMP = 0 V to 7 V
RAMP discharge current
Id-ramp
7
16
29
mA FB = 1 V, COMP = 2 V,
RAMP = 0 V to 1.5 V to 1 V
Low voltage
Vl-ramp
—
17
200
mV FB = 1 V, COMP = 3 V,
RAMP = 0 V to 2.5 V to open
Isink = 100 μA
Zero
current
detector
Upper clamp voltage
Lower clamp voltage
ZCD low threshold voltage
Vzcdh
Vzcdl
Vzcd_lo
5.8
6.4
7.0
0.3
0.8
1.3
1.05
1.50
1.75
V
Isource = –3 mA
V
Isink = 3 mA
V
*1
ZCD hysteresis
Hyszcd
180
300
390
mV *1
Input bias current
Izcd
–1
—
1
μA 1.2 V < Vzcd < 5 V
Slave
control
Phase delay
On time ratio
Phase
Ton-ratio
160
180
200
deg. *1, *2
–5
—
5
%
*1, *2
Restart Restart time delay
Tstart
210
280
350
μs
Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Notes: 1. Design spec.
2.
Tperiod (25 μs)
GD-M
Ton-m
(12.5 μs)
GD-S
Tdelay
Ton-s
Phase =
Tdelay
Tperiod
× 360 [deg.]
Ton-ratio =
1–
Ton-s
Ton-m
× 100 [%]
R19DS0079EJ0400 Rev.4.00
Dec 13, 2014
Page 5 of 7
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