DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

R2A20111SP Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
R2A20111SP
Renesas
Renesas Electronics Renesas
R2A20111SP Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
R2A20111SP/DD
Electrical Characteristics (cont.)
CAMP
IAC/
Multiplier
Item
Input offset voltage
Open loop gain
High voltage
Low voltage
Source current
Sink current
Transconductance
IAC pin voltage
Imo current 1
Symbol
Vio-ca
Av-ca
Vcaoh
Vcaol
Isrc-ca
Isnk-ca
Gm-c
Viac
Imo1
Imo current 2
Imo2
Imo current 3
Imo3
Imo current 4
Imo4
OUT
Minimum duty cycle
Maximum duty cycle
Rise time
Fall time
Low voltage
High voltage
Shut down Shut down voltage
Reset voltage
Shut down current
Note: 1. Design spec.
Dmin-out
Dmax-out
tr-out
tf-out
Vol1-out
Vol2-out
Vol3-out
Voh1-out
Voh2-out
Vshut
Vres
Ishut
Min
5.2
–135
67
530
1.6
–61.3
–197.9
–32.8
–110.4
90
11.5
10.0
3.30
120
(Ta = 25°C, VCC = 12 V, RT = 27 kΩ, CT = 1000 pF)
Typ Max
(–10)
0
68
Unit
Test Conditions
mV *1
dB
*1
5.7
6.2
V
0.1
0.3
V
–90
–67
μA CAO = 2.5 V
90
135
μA CAO = 2.5 V
700
1000
μA/V *1
2.3
3.0
V
IAC = 100 μA
–51.5 –41
μA EO = 2.5 V, IAC = 150 μA
PFC-ON = 1.2 V
–165 –131.5 μA EO = Vcaoh, IAC = 150 μA
PFC-ON = 1.2 V
–27 –21.2
μA EO = 2.5 V, IAC = 375 μA
PFC-ON = 2.5 V
–92 –73.6
μA EO = Vcaoh, IAC = 375 μA
PFC-ON = 2.5 V
0
% CAO = 4.0 V
95
98
% CAO = 0 V
30
100
ns CL = 1000 pF
30
100
ns CL = 1000 pF
0.05
0.2
V
Iout = 20 mA
0.5
2.0
V Iout = 200 mA (Pulse test)
0.03
0.7
V
Iout = 10 mA, VCC = 5 V
11.9
V Iout = –20 mA
11.0
V
Iout = –200 mA (Pulse test)
4.00 4.70
V Input: DELAY
4.0
V Input: Vcc
190
260
μA VCC = 9 V
CAO
IAC
IAC
CAMP
Oscillator
CAI
CGND
CLIMIT
Imo
Imo = K × {IAC × (VEO – 1V)}
1.3V
CLIMIT
REJ03F0231-0100 Rev.1.00 Mar 28, 2007
Page 8 of 40

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]