BC856B Ver la hoja de datos (PDF) - Siemens AG

Número de pieza

componentes Descripción

Fabricante

BC856B

PNP Silicon AF Transistors

Siemens AG 

BC 856 ... BC 860

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BC 856

BC 857, BC 860

BC 858, BC 859

Collector-base breakdown voltage

IC = 10 µA

BC 856

BC 857, BC 860

BC 858, BC 859

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

BC 856

BC 857, BC 860

BC 858, BC 859

Emitter-base breakdown voltage

IE = 1 µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

DC current gain

IC = 10 µA, VCE = 5 V

BC 856 A … BC 859 A

BC 856 B … BC 860 B

BC 857 C … BC 860 C

IC = 2 mA, VCE = 5 V

BC 856 A … BC 859 A

BC 856 B … BC 860 B

BC 857 C … BC 860 C

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter voltage

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

1)Pulse test: t ≤ 300 µs, D = 2 %.

V(BR)CE0

V

65

–

–

45

–

–

30

–

–

V(BR)CB0

80

–

–

50

–

–

30

–

–

V(BR)CES

80

–

–

50

–

–

30

–

–

V(BR)EB0 5

–

–

ICB0

–

1

15 nA

–

–

4

µA

hFE

–

–

140 –

–

250 –

–

480 –

125 180 250

220 290 475

420 520 800

VCEsat

–

–

mV

75 300

250 650

VBEsat

–

–

700 –

850 –

VBE(on)

600 650 750

–

–

820

Semiconductor Group

3

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