DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PT2309-D Ver la hoja de datos (PDF) - Princeton Technology

Número de pieza
componentes Descripción
Fabricante
PT2309-D
PTC
Princeton Technology PTC
PT2309-D Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Headphone Driver IC
Tel:886-2-66296288
Fax:886-2-29174598
URL:http://www.princeton.com.tw
PT2309
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Condition Min.
Max.
Unit
Supply Voltage
Operating Temperature
VDD
Topr
0
7
V
-40
+85
Storage Temperature
Tstg
-65
+150
Maximum Input Voltage Vimax
-0.3
Vcc+0.3
V
Maximum Input Current Iimax
*
-10
+10
mA
Note: * Input pins surge current can reach 100mA does not induce the CMOS latched up.
ELECTRICAL CHARACTERISTICS
Unless otherwise, Vcc=5VCB=47µFbandwidth=22~22KHz
Parameter
Symbol
Conditions
Supply Voltage
VDD
Operating Current
Is
Normal Mode
Mute Mode
Voltage Gain
Vg
Two Channels Gain
Error
Vgerr
THD+N
THD
Vin = 1VrmsRL = 32
Vin = 1VrmsRL = 5.1K
Power Output
THD=0.1%RL=32
Po
THD=0.1%RL=16
Signal-to-Noise Ratio SNR
Input=GNDA-Weighted
Channel Separation CS
F=1KHz
F=100~20KHz
Power Supply
Rejection Ratio
PSRR
Vr=100mVrmsF=100Hz
Mute
mute
MUTE=GNDF=1KHz
Mute Voltage
Vmute
VIH, MUTE= OFF
VIL, MUTE= ON
Min. Typ. Max. Unit
3
5
6
V
6
7.5
9
mA
4.5
6
7.5 mA
-1
0
+1
dB
-0.5
0
+0.5
0.01 0.03 0.06
%
0.003 0.005 0.01
35
45
55
mW
65
75
85
102 105 110 dB
90 100 105
dB
80
90
95
45
55
65
dB
60
75
80
dB
1
1.1
1.4
Vcc
0.8 0.9
1
PT2309 V1.2
-6-
August, 2006

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]