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PSMN1R0-30YLC Datasheet PDF : 15 Pages
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NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 175 °C
-
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
-20
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1] -
VGS = 10 V; Tmb = 100 °C; see Figure 1
[1] -
pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 4 -
Tmb = 25 °C; see Figure 2
-
-55
-55
-
MM (JEDEC JESD22-A115)
960
IS
source current
Tmb = 25 °C
[1] -
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
avalanche energy
Vsup ≤ 30 V; RGS = 50 Ω; unclamped;
see Figure 3
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
100 A
100 A
1030 A
137 W
175 °C
175 °C
260 °C
-
V
100 A
1030 A
259 mJ
300
ID
(A)
200
003aae940
120
Pder
(%)
80
03na19
100
(1)
0
0
50
100
150
200
Tmb (°C)
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 23 November 2010
© NXP B.V. 2010. All rights reserved.
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