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28F008SA

8-MBIT (1-MBIT x 8) FlashFile™ MEMORY

Intel 

28F008SA

PRODUCT OVERVIEW

The 28F008SA is a high-performance 8-Mbit

(8 388 608 bit) memory organized as 1 Mbyte

(1 048 576 bytes) of 8 bits each Sixteen 64-Kbyte

(65 536 byte) blocks are included on the 28F008SA

A memory map is shown in Figure 6 of this specifica-

tion A block erase operation erases one of the six-

teen blocks of memory in typically 1 6 seconds in-

dependent of the remaining blocks Each block can

be independently erased and written 100 000 cy-

cles Erase Suspend mode allows system software

to suspend block erase to read data or execute

code from any other block of the 28F008SA

The 28F008SA is available in the 40-lead TSOP

(Thin Small Outline Package 1 2 mm thick) and 44-

lead PSOP (Plastic Small Outline) packages Pin-

outs are shown in Figures 2 and 4 of this specifica-

tion

The Command User Interface serves as the inter-

face between the microprocessor or microcontroller

and the internal operation of the 28F008SA

Byte Write and Block Erase Automation allow

byte write and block erase operations to be execut-

ed using a two-write command sequence to the

Command User Interface The internal Write State

Machine (WSM) automatically executes the algo-

rithms and timings necessary for byte write and

block erase operations including verifications

thereby unburdening the microprocessor or micro-

controller Writing of memory data is performed in

byte increments typically within 9 ms an 80% im-

provement over current flash memory products IPP

byte write and block erase currents are 10 mA

typical 30 mA maximum VPP byte write and

block erase voltage is 11 4V to 12 6V

The Status Register indicates the status of the

WSM and when the WSM successfully completes

the desired byte write or block erase operation

The RY BY output gives an additional indicator of

WSM activity providing capability for both hardware

signal of status (versus software polling) and status

masking (interrupt masking for background erase

for example) Status polling using RY BY mini-

mizes both CPU overhead and system power con-

sumption When low RY BY indicates that the

WSM is performing a block erase or byte write oper-

ation RY BY high indicates that the WSM is ready

for new commands block erase is suspended or the

device is in deep powerdown mode

Maximum access time is 85 ns (tACC) over the com-

mercial temperature range (0 C to a70 C) and over

VCC supply voltage range (4 5V to 5 5V and 4 75V to

5 25V) ICC active current (CMOS Read) is 20 mA

typical 35 mA maximum at 8 MHz

When the CE and RP pins are at VCC the ICC

CMOS Standby mode is enabled

A Deep Powerdown mode is enabled when the

RP pin is at GND minimizing power consumption

and providing write protection ICC current in deep

powerdown is 0 20 mA typical Reset time of 400 ns

is required from RP switching high until outputs are

valid to read attempts Equivalently the device has a

wake time of 1 ms from RP high until writes to the

Command User Interface are recognized by the

28F008SA With RP at GND the WSM is reset

and the Status Register is cleared

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