PN4275 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
PN4275 Datasheet PDF : 7 Pages
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NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CES
Collector-Emitter Breakdown Voltage
IB
Base Cutoff Current
ICBO
Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
IC = 10 µA, IB = 0
VCE = 20 V
VCB = 20 V, IE = 0,
TA = 65 °C
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, VCE = 1.0 V
IC = 30 mA, VCE = 0.4 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
IC = 10 mA, IB = 3.3 mA
IC = 100 mA, IB = 10 mA
IC = 10 mA, IB = 1.0 mA,
TA = 65 °C
IC = 10 mA, IB = 1.0 mA
IC = 30 mA, IB = 3.0 mA
IC = 10 mA, IB = 3.3 mA
IC = 100 mA, IB = 10 mA
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
hfe
Small-Signal Current Gain
VCB = 5.0 V, f = 1.0 MHz
IC = 10 mA, VCE = 10 V,
f = 100 MHz
SWITCHING CHARACTERISTICS
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
ts
Storage Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCC = 3.0 V, IC = 10 mA,
IB1 = 3.3 mA,
VBE (off) = -3.0 V
VCC = 3.0 V, IC = 10 mA
IB1 = IB2 = 3.3 mA
VBE (off) = -3.0 V
IC = IB1 = IB2 = 10 mA
15
V
40
V
4.5
V
40
V
0.4
µA
10
µA
35
120
30
18
0.20
V
0.25
V
0.18
V
0.50
V
0.30
V
0.72
0.85
V
1.15
V
0.74
1.0
V
1.6
V
4.0
pF
4.0
12
ns
9.0
ns
7.0
ns
12
ns
8.0
ns
8.0
ns
13
ns
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