PN4275 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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PN4275 Datasheet PDF : 7 Pages
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PN4275
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN Switching Transistor
This device is designed for high speed saturated switching
applications at currents to 100 mA. Sourced from Process 21.
See PN2369A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
15
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
4.5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
PN4275
350
2.8
125
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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