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Fabricante

PN168

Silicon NPN Phototransistor

Panasonic Corporation 

Phototransistors

PNA1801L (PN168)

Silicon NPN Phototransistor

For optical control systems

Features

High sensitivity

Wide spectral sensitivity, suited for detecting GaAs LEDs

Small size, high output power, low cost

ø 3 plastic package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Collector to emitter voltage

Emitter to collector voltage

Collector current

Collector power dissipation

Operating ambient temperature

Storage temperature

Symbol Ratings Unit

VCEO

30

V

VECO

5

V

IC

20

mA

PC

100

mW

Topr

–25 to +85

˚C

Tstg –30 to +100 ˚C

ø3.8±0.2

ø3.0±0.2

Unit : mm

2-0.8 max.

2-0.5±0.1

2

1

2.54

0.5±0.1

1: Emitter

2: Collector

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Symbol

Conditions

min typ max Unit

Dark current

Collector photo current

ICEO

ICE(L)

VCE = 10V

VCE = 10V, L = 500 lx*1

0.005 0.5 µA

0.8 3

mA

Peak sensitivity wavelength

λP

VCE = 10V

800

nm

Acceptance half angle

θ

Measured from the optical axis to the half power point

35

deg.

Response time

Collector saturation voltage

tr, tf*2

VCE(sat)

VCC = 10V, ICE(L) = 1mA, RL = 100Ω

ICE(L) = 1mA, L = 1000 lx*1

4

µs

0.2 0.5 V

*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

*2 Switching time measurement circuit

Sig.IN

50Ω

VCC

(Input pulse)

Sig.OUT

RL

(Output pulse) td

tr

90%

10%

tf

td : Delay time

tr : Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

tf : Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

Note) The part number in the parenthesis shows conventional part number.

1

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