PMP5501V Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Fabricante
PMP5501V Datasheet PDF : 14 Pages
| |||
NXP Semiconductors
PMP5501V; PMP5501G; PMP5501Y
PNP/PNP matched double transistors
4. Marking
Table 5. Marking codes
Type number
PMP5501V
PMP5501G
PMP5501Y
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
ED
R4*
S6*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
SOT666
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
[1][2] -
SOT353
[1] -
SOT363
[1] -
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT666
[1][2] -
SOT353
[1] -
SOT363
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
−50
V
−45
V
−5
V
−100 mA
−200 mA
200
mW
200
mW
200
mW
300
mW
300
mW
300
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
PMP5501V_G_Y_3
Product data sheet
Rev. 03 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
3 of 14
Share Link: 